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| 2SC4680 Silicon NPN Epitaxial Application VHF / UHF high frequency switching Features * Low Ron and high performance for RF switch. * Capable of high density mounting. Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC4680 Absolute Maximum Ratings (Ta = 25C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 12 8 3 50 150 150 -55 to +150 Unit V V V mA mW C C Electrical Characteristics (Ta = 25C) Item Collector to base breakdown voltage Collector cutoff current Symbol V(BR)CBO I CBO I CEO Emitter cutoff current Collector to emitter saturation voltage DC current transfer ratio Collector output capacitance Note: Marking is "XU-". I EBO VCE(sat) hFE Cob Min 12 -- -- -- -- 100 -- Typ -- -- -- -- 70 250 1.0 Max -- 10 1 10 100 -- 1.5 pF Unit V A mA A mV Test conditions I C = 10 A, IE = 0 VCB = 12 V, IE = 0 VCE = 8 V, RBE = VEB = 3 V, IC = 0 I C = 20 mA, IB = 4 mA VCE = 5 V, IC = 5 mA VCB = 5 V, IE = 0, f = 1 MHz 2 2SC4680 Maximum Collector Dissipation Curve Collector Power Dissipation PC (mW) 150 DC Current Transfer Ratio hFE DC Current Transfer Ratio vs. Collector Current 500 VCE = 5 V 400 100 300 200 50 100 0 0 50 100 150 Ambient Temperature Ta (C) 1 2 5 10 20 Collector Current IC (mA) 50 Gain Bandwidth Product vs. Collector Current Collector Output Capacitance Cob (pF) 2.0 Gain Bandwidth Product fT (MHz) VCE = 5 V 1.6 1.6 Collector Output Capacitance vs. Collector to Base Voltage IE = 0 f = 1 MHz 1.4 1.2 1.2 0.8 1.0 0.4 0.8 0 1 2 5 10 20 Collector Current IC (mA) 50 0.6 0.5 1.0 2 5 10 20 Collector to Base Voltage VCB (V) 3 2SC4680 On Resistance vs. Base Current 100 50 On Resistance Ron () Shunt Circuit Reduction LS (dB) f = 1 kHz 0.5 VB = 0 0.4 40 Signal Reduction vs. Frequency 50 Transfer Circuit Reduction Lt (dB) 20 10 5 0.3 Lt 0.2 30 20 2 1 0.1 0.1 LS 10 0.2 0.5 1.0 2 5 Base Current IB (mA) 10 0 50 100 200 500 Frequency f (MHz) 0 1000 Signal Reduction vs. Frequency 20 Shunt Circuit Reduction LS (dB) VB = 5 V 16 LS 1.6 2.0 Transfer Circuit Reduction Lt (dB) 12 1.2 8 Lt 4 0.8 0.4 0 50 100 200 500 Frequency f (MHz) 0 1000 4 2SC4680 On Resistance Test Circuit Vin 100 F - + 2.7 k D.U.T. Ron = 2 nF Vout R1 Vin - Vout R1 (1 k) 100 F +- Vout VB Reduction Test Circuit (Shunt Circuit) Input 2 nF 2.7 k L1 D.U.T. 2 nF 2 nF Output VB L1 : 3 mm inside dia, 0.2 mm enameled copper wire, 15 turns Reduction Test Circuit (Transfer Circuit) Input Output 2 nF D.U.T. 2 nF L1 2.7 k L2 2 nF VB L1, L2 : 3 mm inside dia, 0.2 mm enameled copper wire, 15 turns 5 Unit: mm 0.65 0.10 3 - 0.4 + 0.05 - 0.16 - 0.06 + 0.10 1.5 0.15 + 0.2 - 0.6 0 - 0.1 0.95 0.95 1.9 0.2 2.95 0.2 0.3 + 0.2 1.1 - 0.1 0.65 2.8 Hitachi Code JEDEC EIAJ Weight (reference value) MPAK -- Conforms 0.011 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan. |
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